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| DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D070 BAS28 High-speed double diode Product specification Supersedes data of April 1996 1996 Sep 10 Philips Semiconductors Product specification High-speed double diode FEATURES * Small plastic SMD package * High switching speed: max. 4 ns * Continuous reverse voltage: max. 75 V * Repetitive peak reverse voltage: max. 85 V * Repetitive peak forward current: max. 500 mA . handbook, halfpage BAS28 PINNING PIN 1 2 3 4 DESCRIPTION cathode (k1) cathode (k2) anode (a2) anode (a1) DESCRIPTION The BAS28 consists of two high-speed switching diodes, fabricated in planar technology, and encapsulated in the small plastic SMD SOT143 package. The diodes are not connected. 4 3 4 3 APPLICATIONS * High-speed switching in e.g. surface mounted circuits. 1 1 Top view Marking code: JTp. 2 2 MAM059 Fig.1 Simplified outline (SOT143) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 C prior to surge; see Fig.4 t = 1 s t = 1 ms t=1s Ptot Tstg Tj Note 1. Device mounted on an FR4 printed-circuit board. total power dissipation storage temperature junction temperature Tamb = 25 C; note 1 - - - - -65 - 4 1 0.5 250 +150 150 A A A mW C C see Fig.2; note 1 CONDITIONS MIN. - - - - MAX. 85 75 215 500 V V mA mA UNIT 1996 Sep 10 2 Philips Semiconductors Product specification High-speed double diode ELECTRICAL CHARACTERISTICS Tj = 25 C; unless otherwise specified. SYMBOL VF PARAMETER forward voltage see Fig.3 IF = 1 mA IF = 10 mA IF = 50 mA IF = 150 mA IR reverse current see Fig.5 VR = 25 V VR = 75 V VR = 25 V; Tj = 150 C VR = 75 V; Tj = 150 C Cd trr diode capacitance reverse recovery time f = 1 MHz; VR = 0; see Fig.6 when switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA; see Fig.7 when switched from IF = 10 mA; tr = 20 ns; see Fig.8 - - - - - - 30 1 30 50 1.5 4 - - - - 715 855 1 CONDITIONS MIN. MAX. BAS28 UNIT mV mV V V nA A A A pF ns 1.25 Vfr forward recovery voltage - 1.75 V THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on an FR4 printed-circuit board. PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS VALUE 360 500 UNIT K/W K/W 1996 Sep 10 3 Philips Semiconductors Product specification High-speed double diode GRAPHICAL DATA BAS28 MSA562 -1 250 IF (mA) 200 handbook, halfpage 300 MBG382 IF (mA) (1) (2) (3) 200 150 100 100 50 0 0 50 100 150 200 Tamb (oC) 0 0 1 VF (V) 2 Device mounted on an FR4 printed-circuit board. (1) Tj = 150 C; typical values. (2) Tj = 25 C; typical values. (3) Tj = 25 C; maximum values. Fig.2 Maximum permissible continuous forward current as a function of ambient temperature. Fig.3 Forward current as a function of forward voltage. 102 handbook, full pagewidth IFSM (A) MBG704 10 1 10-1 1 Based on square wave currents. Tj = 25 C prior to surge. 10 102 103 tp (s) 104 Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 1996 Sep 10 4 Philips Semiconductors Product specification High-speed double diode BAS28 105 IR (nA) 10 4 MGA884 handbook, halfpage 0.8 MBG446 Cd (pF) V R = 75 V 0.6 103 max 75 V 0.4 10 2 25 V 0.2 typ typ 10 0 100 T j ( o C) 200 0 4 8 12 VR (V) 16 0 f = 1 MHz; Tj = 25 C. Fig.5 Reverse current as a function of junction temperature. Fig.6 Diode capacitance as a function of reverse voltage; typical values. 1996 Sep 10 5 Philips Semiconductors Product specification High-speed double diode BAS28 handbook, full pagewidth tr D.U.T. 10% SAMPLING OSCILLOSCOPE R i = 50 VR 90% tp t RS = 50 V = VR I F x R S IF IF t rr t (1) MGA881 input signal output signal (1) IR = 1 mA. Fig.7 Reverse recovery voltage test circuit and waveforms. I 1 k 450 I 90% V R S = 50 D.U.T. OSCILLOSCOPE R i = 50 10% MGA882 V fr t tr tp t input signal output signal Fig.8 Forward recovery voltage test circuit and waveforms. 1996 Sep 10 6 Philips Semiconductors Product specification High-speed double diode PACKAGE OUTLINE BAS28 handbook, full pagewidth 0.75 0.60 0.150 0.090 4 0.1 max 10 max o 3.0 2.8 1.9 3 B A 0.2 M A B 10 max o 1.4 1.2 2.5 max 1 1.1 max o 2 0.1 M A B 30 max 0.88 0 0.1 1.7 0.48 0 0.1 MBC845 TOP VIEW Dimensions in mm. Fig.9 SOT143. DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Sep 10 7 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. |
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